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| AON7406 N-Channel Enhancement Mode Field Effect Transistor General Description The AON7406 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in SMPS and general purpose applications. Standard Product AON7406 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 30V (VGS = 10V) ID = 11A RDS(ON) < 15m (VGS = 10V) RDS(ON) < 23.5m (VGS = 4.5V) DFN 3x3 Top View Bottom View D Pin 1 S S S G D D D D G S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,H Pulsed Drain Current Continuous Drain Current G Power Dissipation Power Dissipation B C Maximum 30 20 20 20 50 11 8.8 27 11 3.1 2 -55 to 150 Units V V TC=25C TC=100C TA=25C TA=70C TC=25C TC=100C TA=25C A ID IDM IDSM PD PDSM TJ, TSTG A W TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case D C Symbol t 10s Steady-State Steady-State RJA RJC Typ 30 60 4 Max 40 75 4.5 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON7406 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=30V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=11A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=8.5A Forward Transconductance VDS=5V, ID=10A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C 1 50 12.5 17.5 19 19 0.73 1 3 955 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 145 112 0.5 17 VGS=10V, VDS=15V, ID=10A 9 3.4 4.7 5 VGS=10V, VDS=15V, RL=1.5, RGEN=3 IF=11A, dI/dt=100A/s 6 19 4.5 19 9 25 0.85 24 12 1200 15 21 23.5 S V A pF pF pF nC nC nC nC ns ns ns ns ns nC m 1.6 Min 30 1 5 100 3 Typ Max Units V A nA V A STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qg (4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=11A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA 150 curve provides a single pulse rating. F. The current rating is based on the t 10s junction to ambient thermal resistance rating. G.The maximum current rating is limited by bond-wires. Rev1: Nov 2007 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON7406 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 10V 60 6.0V 5.0V 4.5V ID (A) 40 4.0V 3.5V 20 VGS=3.0V 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics ID(A) 20 15 10 5 0 1.50 125C 25C 35 VDS=5V 30 25 2.00 2.50 3.00 3.50 4.00 4.50 VGS(Volts) Figure 2: Transfer Characteristics 1.8 Normalized On-Resistance VGS=10V ID=11A 24 22 20 RDS(ON) (m) 18 16 14 12 10 0 5 10 15 20 V GS=10V VGS=4.5V 1.6 1.4 VGS=4.5V ID=8.5A 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 ID=11A 40 RDS(ON) (m) 10 1 150 125C 0.1 IS (A) 25C 0.01 0.001 20 25C 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0001 0.00001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics -40C 30 125C Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON7406 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 4 8 12 16 20 0 0 Qg (nC) Figure 7: Gate-Charge Characteristics 1500 VDS=15V ID=11A Capacitance (pF) 1250 1000 750 500 250 Crss 5 10 15 20 25 30 Ciss VDS=VGS ID=1mA 1.4 50 Coss 1.8 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 RDS(ON) limited ID (Amps) 10.0 10s 1ms 10ms 0.1s 1.0 TJ(Max)=150C TA=25C 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 1s 10s DC 100s 50 40 Power (W) 30 20 10 0 0.0001 800 140 80 0.5 15 7 TJ(Max)=150C TA=25C 220 140 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 0.001 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=60C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 0.1 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton Single FUNCTIONS AND RELIABILITY WITHOUT NOTICE Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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